Global Silicon Carbide Semiconductor Device Market Segments 2024, Forecast To 2033
5 Mar, 2024
The silicon carbide semiconductor device market has experienced exponential growth, surging from $1.59 billion in 2023 to $2 billion in 2024, reflecting a remarkable CAGR of 25.2%. This surge is attributed to early developments in silicon carbide (SiC) and increased demand for high-temperature applications. Anticipated exponential growth projects the market size to reach $4.52 billion in 2028, sustaining a CAGR of 22.7%. Key trends include increasing power density requirements, adoption in the automotive industry, and advancements in manufacturing techniques.
Global Silicon Carbide Semiconductor Device Market Key Driver
The silicon carbide semiconductor device market is growing with the increasing demand for electric vehicles, reaching 6.6 million electric vehicle sales in 2021. Silicon carbide semiconductor devices' efficiency in EV powertrains contributes to market growth.
Get A Free Sample Of The Global Silicon Carbide Semiconductor Device Market ReportGlobal Silicon Carbide Semiconductor Device Market Segments
The silicon carbide semiconductor device market covered in this report is segmented –
1) By Type: SIC Diode, SIC Transistor, Other Types
2) By Wafer Size: 1 Inch To 4 Inches, 6 Inches, 8 Inches, 10 Inches And Above
3) By End-User: Automotive, Consumer Electronics, Aerospace And Defense, Medical Devices, Data And Communication Devices, Energy And Power, Other End-Users
By Geography: The regions covered in the anti inflammatory therapeutics market report are Asia-Pacific, Western Europe, Eastern Europe,North America, South America, Middle East, and Africa. Among these regions.
Asia-Pacific was the largest region in the silicon carbide semiconductor device market in 2023. The regions covered in the silicon carbide semiconductor device market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa
Major Silicon Carbide Semiconductor Device Industry Players
Infineon Technologies India Private Ltd.; ROHM Co. Ltd.; STMicroelectronics; Semiconductor Components Industries LLC; Wolfspeed Inc.; Toshiba Corporation; TT Electronics PLC; Mitsubishi Electric Corporation; Microsemi Corporation; Allergo Microsystems Inc.; Powerex Inc.; Microchip Technology Corporation; Hitachi Power Semiconductor Device Ltd.; Semikron; Global Power Technologies Group; Texas instruments Inc.; NXP Semiconductors N.V.; ON Semiconductor Corporation; United Silicon Carbide Inc.; GeneSiC Semiconductor Inc.; Danfoss A/S; Fuji Electric Co. Ltd.; II-VI Incorporated; Xiamen Sanan Integrated Circuit Co.Ltd.; Shanghai Hanxin Technology; Century Jinguang; BYD Semiconductor Co. Ltd.; InventChip Technology Co. Ltd.; CRRC Corporation Limited; Renesas Electronics Vietnam Co.Ltd.
Get The Full Global Silicon Carbide Semiconductor Device Market Report
AIOps Silicon Carbide Semiconductor Device Market Overview
A silicon carbide semiconductor device refers to a silicon carbide substrate, a primary electrode, the first barrier layer and an interconnecting layer. These devices are small, robust and very efficient for developing power electronic devices in batteries and detectors.
Silicon Carbide Semiconductor Device Global Market Report 2023 provides data on the global silicon carbide semiconductor device market such as market size, growth forecasts, segments and geographies, competitive landscape including leading competitors’ revenues, profiles and market shares. The silicon carbide semiconductor device market report identifies opportunities and strategies based on market trends and leading competitors’ approaches.